VS-GA200TH60S
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 260A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$395.86583
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-GA200TH60S from Vishay General Semiconductor - Diodes Division is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the VS-GA200TH60S is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Vishay General Semiconductor - Diodes Division's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 260 A
- Power - Max: 1042 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A (Typ)
- Current - Collector Cutoff (Max): 5 µA
- Input Capacitance (Cies) @ Vce: 13.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
Related Products
IXYS
VII50-06P1
Microchip Technology
APTGF50DSK120T3G
Powerex Inc.
CM400DU-12H
Powerex Inc.
CM600HA-28H
IXYS
MIXA151W1200EH
Infineon Technologies
6MS24017E33W32780NOSA1
Infineon Technologies
IRG7T300SD12B
Infineon Technologies
IRG7T200HF12B
Infineon Technologies
BSM35GB120DN2HOSA1
Microsemi Corporation