VS-GB200TH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 360A INT-A-PAK
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Reference Price (USD)
12+
$434.51000
Exquisite packaging
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The VS-GB200TH120N from Vishay General Semiconductor - Diodes Division is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the VS-GB200TH120N is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Vishay General Semiconductor - Diodes Division's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 360 A
- Power - Max: 1136 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 14.9 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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