VS-GB200TH120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 330A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$434.51000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-GB200TH120U by Vishay General Semiconductor - Diodes Division redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the VS-GB200TH120U in high-efficiency servo controllers for manufacturing automation. Vishay General Semiconductor - Diodes Division combines innovation with quality in every VS-GB200TH120U module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 330 A
- Power - Max: 1316 W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
Related Products
IXYS
MIXA10W1200TML
Powerex Inc.
CM35MXA-24S
Powerex Inc.
CM200DU-34KA
Infineon Technologies
FZ1600R12KF4S1NOSA1
IXYS
MIXA20W1200MC
Microsemi Corporation
APTGT20X60T3G
Microsemi Corporation
APTGT150DA60TG
Infineon Technologies
PSDC312E8427618NOSA1
Infineon Technologies
PS3GHFANSET30603NOSA1
Microsemi Corporation