VS-GB300TH120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 530A INT-A-PAK
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Reference Price (USD)
12+
$574.84417
Exquisite packaging
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Experience next-generation power control with Vishay General Semiconductor - Diodes Division's VS-GB300TH120U IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The VS-GB300TH120U offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the VS-GB300TH120U in your next-generation HVDC systems or particle accelerator power supplies. Vishay General Semiconductor - Diodes Division delivers reliability where it matters most with the VS-GB300TH120U IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 530 A
- Power - Max: 2119 W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 300A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 25.3 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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