VS-GP100TS60SFPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 337A INT-A-PAK
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Experience next-generation power control with Vishay General Semiconductor - Diodes Division's VS-GP100TS60SFPBF IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The VS-GP100TS60SFPBF offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the VS-GP100TS60SFPBF in your next-generation HVDC systems or particle accelerator power supplies. Vishay General Semiconductor - Diodes Division delivers reliability where it matters most with the VS-GP100TS60SFPBF IGBT module.
Specifications
- Product Status: Last Time Buy
- IGBT Type: PT, Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 337 A
- Power - Max: 781 W
- Vce(on) (Max) @ Vge, Ic: 1.34V @ 15V, 100A
- Current - Collector Cutoff (Max): 150 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
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