VS-GT75LP120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 150A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Vishay General Semiconductor - Diodes Division's VS-GT75LP120N IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The VS-GT75LP120N offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the VS-GT75LP120N in your next-generation HVDC systems or particle accelerator power supplies. Vishay General Semiconductor - Diodes Division delivers reliability where it matters most with the VS-GT75LP120N IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 543 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
Related Products
Powerex Inc.
QID1210006
onsemi
FTOO3V43A1
IXYS
IXGN200N60A2
Infineon Technologies
BSM75GAL120DN2HOSA1
Powerex Inc.
CM150DY-24A
Infineon Technologies
FZ1600R12KE3NOSA1
onsemi
FMS7G10US60S
IXYS
IXGN50N60BD2
Microsemi Corporation
APTGT35DA120D1G
Infineon Technologies