VS-HFA08TB120SL-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 1200V 8A D2PAK
$0.97
Available to order
Reference Price (USD)
800+
$0.99435
Exquisite packaging
Discount
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Engineered for excellence, Vishay General Semiconductor - Diodes Division's VS-HFA08TB120SL-M3 represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Vishay General Semiconductor - Diodes Division's proprietary screening processes, the VS-HFA08TB120SL-M3 guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: -
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 95 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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