VS-MURB2020CT-1HM3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE STANDARD 200V 10A TO262
$1.08
Available to order
Reference Price (USD)
1,000+
$0.95222
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-MURB2020CT-1HM3 from Vishay General Semiconductor - Diodes Division is a standout in the Discrete Semiconductor Products family, offering unmatched rectification efficiency in compact diode arrays. Designed for high-density PCB layouts, this product excels in bridge rectifiers and polarity protection circuits. Its low leakage current and high-temperature stability make it a favorite for telecommunications, consumer electronics, and medical devices. Choose Vishay General Semiconductor - Diodes Division's VS-MURB2020CT-1HM3 for applications where space-saving design meets industrial-grade reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 21 ns
- Current - Reverse Leakage @ Vr: 15 µA @ 200 V
- Operating Temperature - Junction: -65°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262-3
Related Products
Vishay General Semiconductor - Diodes Division
VS-MURD620CTHM3
GeneSiC Semiconductor
MBRT300100R
onsemi
NTSJ20U100CTG
Diotec Semiconductor
BAV70W
Central Semiconductor Corp
CMKD3003DO TR PBFREE
Vishay General Semiconductor - Diodes Division
VS-12CWQ04FNTRRHM3
Linear Integrated Systems, Inc.
SSTDPAD100 SOIC 8L
Littelfuse Inc.
DST2060C
Nexperia USA Inc.
BAS70-07S,115
GeneSiC Semiconductor