VS-MURD620CT-M3
Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 6A TO252AA
$0.90
Available to order
Reference Price (USD)
1+
$0.82000
75+
$0.67667
150+
$0.55227
525+
$0.43661
1,050+
$0.34928
2,550+
$0.31653
5,025+
$0.30562
Exquisite packaging
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The VS-MURD620CT-M3 from Vishay General Semiconductor - Diodes Division sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Vishay General Semiconductor - Diodes Division's rigorous quality control ensures the VS-MURD620CT-M3 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 19 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Operating Temperature - Junction: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)