VS-VSKJ236/12PBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN 1.2KV 115A INTAPAK
$64.02
Available to order
Reference Price (USD)
15+
$60.13867
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, Vishay General Semiconductor - Diodes Division's VS-VSKJ236/12PBF represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Vishay General Semiconductor - Diodes Division's proprietary screening processes, the VS-VSKJ236/12PBF guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 115A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3)
- Supplier Device Package: INT-A-PAK
Related Products
Renesas Electronics America Inc
RKD702KL-1N#R1
Vishay General Semiconductor - Diodes Division
VS-VSKJ320-12PBF
IXYS
MDNA300P2200PTSF
Vishay General Semiconductor - Diodes Division
VS-VSKJ91/12
SMC Diode Solutions
88CNQ060SMS2
Infineon Technologies
DDB6U104N18RR
Microchip Technology
1N6660D
Microchip Technology
UFT3230A
IXYS
MDNA380P2200KC
Semtech Corporation