VS-VSKJ250-08PBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE 800V 125A MAGN-A-PAK
$175.50
Available to order
Reference Price (USD)
2+
$151.03000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-VSKJ250-08PBF from Vishay General Semiconductor - Diodes Division sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Vishay General Semiconductor - Diodes Division's rigorous quality control ensures the VS-VSKJ250-08PBF maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io) (per Diode): 125A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 mA @ 800 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: MAGN-A-PAK
- Supplier Device Package: MAGN-A-PAK®
Related Products
Microchip Technology
UFT3260D
IXYS
DSA20C150PN
Panjit International Inc.
MER1002FCT_T0_00601
Vishay General Semiconductor - Diodes Division
V10KM45DUHM3/I
Semtech Corporation
SDHP5KS
SanRex Corporation
DD240KB160
Micro Commercial Co
BAS40-06HE3-TP
Diodes Incorporated
G30H100CTFW
Diodes Incorporated
STPR1040CTW
Microchip Technology