VSSAF510-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 5A DO221AC
$0.11
Available to order
Reference Price (USD)
1+
$0.10725
500+
$0.1061775
1000+
$0.105105
1500+
$0.1040325
2000+
$0.10296
2500+
$0.1018875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VSSAF510-M3/I by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The VSSAF510-M3/I is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the VSSAF510-M3/I delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 100 V
- Capacitance @ Vr, F: 440pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: DO-221AC (SlimSMA)
- Operating Temperature - Junction: -40°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
V1FM12-M3/H
Microchip Technology
R37120
Microchip Technology
JANTX1N5553
Powerex Inc.
R7013403XXUA
Infineon Technologies
ND104N16KHPSA1
Microchip Technology
JAN1N5195US
Microchip Technology
MBR30150FCTE3/TU
SanRex Corporation
FRS300BA50
Microchip Technology
JAN1N6912UTK2AS/TR
Comchip Technology