VT10200C-M3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOT 200V TO220AB
$0.64
Available to order
Reference Price (USD)
3,000+
$0.63684
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For engineers specializing in power electronics, the VT10200C-M3/4W by Vishay General Semiconductor - Diodes Division represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Vishay General Semiconductor - Diodes Division's patented junction design, the VT10200C-M3/4W achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 200 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
Renesas Electronics America Inc
1S2836(0)-T1B-A
Panasonic Electronic Components
MA3D752
Taiwan Semiconductor Corporation
HERF1608G
STMicroelectronics
STPS40M80CT
Nexperia USA Inc.
BAS40XY,115
Littelfuse Inc.
DST2045C
Diodes Incorporated
BAV23CQ-13-F
onsemi
MUR1620CTG
Vishay General Semiconductor - Diodes Division
VS-HFA50PA60C-N3
Panjit International Inc.