W634GU8QB09I TR
Winbond Electronics
Winbond Electronics
4GB DDR3L 1.35V SDRAM, X8, 1066M
$7.65
Available to order
Reference Price (USD)
1+
$7.65000
500+
$7.5735
1000+
$7.497
1500+
$7.4205
2000+
$7.344
2500+
$7.2675
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your projects with the W634GU8QB09I TR Memory IC from Winbond Electronics, a top-tier component in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the needs of sophisticated electronic systems. Its innovative design ensures optimal performance and energy efficiency.
The W634GU8QB09I TR exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The W634GU8QB09I TR provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The W634GU8QB09I TR is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: 1.06 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-VFBGA
- Supplier Device Package: 78-VFBGA (8x10.5)
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