Shopping cart

Subtotal: $0.00

W66BM6NBUAFJ

Winbond Electronics
W66BM6NBUAFJ Preview
Winbond Electronics
2GB LPDDR4X, X16, 1600MHZ, -40C~
$6.33
Available to order
Reference Price (USD)
1+
$6.32882
500+
$6.2655318
1000+
$6.2022436
1500+
$6.1389554
2000+
$6.0756672
2500+
$6.012379
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Not For New Designs
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)

Related Products

Micron Technology Inc.

MTFC8GACAENS-K1 AIT

ISSI, Integrated Silicon Solution Inc

IS43DR86400E-3DBLI

Adesto Technologies

AT45DB041E-SHN-T

Rohm Semiconductor

BR24G01F-3GTE2

Microchip Technology

SST39VF1601C-70-4C-EKE-T

Renesas Electronics America Inc

71V3556SA100BQG8

ISSI, Integrated Silicon Solution Inc

IS25WP064A-RMLE-TR

Infineon Technologies

CY7C1512AV18-200BZI

ISSI, Integrated Silicon Solution Inc

IS45S16400J-6CTLA1

Fairchild Semiconductor

FM24C32UFLZM8X

Top