W66BM6NBUAFJ TR
Winbond Electronics
Winbond Electronics
2GB LPDDR4X, X16, 1600MHZ, -40C~
$5.60
Available to order
Reference Price (USD)
1+
$5.59500
500+
$5.53905
1000+
$5.4831
1500+
$5.42715
2000+
$5.3712
2500+
$5.31525
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The W66BM6NBUAFJ TR by Winbond Electronics is a premium Memory IC designed to enhance the performance of your electronic systems. As part of the Memory category, this IC provides efficient data storage and retrieval, making it indispensable for modern technology. Its compact design and high-speed operation make it a preferred choice for various applications.
Memory ICs like the W66BM6NBUAFJ TR are known for their durability and high performance. These ICs feature advanced architectures that support large data capacities and fast access times. The W66BM6NBUAFJ TR is no exception, offering reliable operation and low power consumption, which are critical for battery-powered devices.
The W66BM6NBUAFJ TR is utilized in numerous fields, including consumer electronics, aerospace, and defense. For instance, it is commonly found in laptops and gaming consoles where speed and storage are essential. Additionally, it is used in aerospace systems where reliability and performance cannot be compromised. The W66BM6NBUAFJ TR is a versatile and dependable Memory IC for diverse applications.
Specifications
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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