W66BQ6NBUAFJ TR
Winbond Electronics

Winbond Electronics
2GB LPDDR4X, X16, 1600MHZ, -40C~
$5.10
Available to order
Reference Price (USD)
1+
$5.10004
500+
$5.0490396
1000+
$4.9980392
1500+
$4.9470388
2000+
$4.8960384
2500+
$4.845038
Exquisite packaging
Discount
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The W66BQ6NBUAFJ TR from Winbond Electronics is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the W66BQ6NBUAFJ TR ensures longevity and consistent performance in various environments.
Memory ICs like the W66BQ6NBUAFJ TR are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the W66BQ6NBUAFJ TR delivers unmatched reliability and efficiency.
The W66BQ6NBUAFJ TR is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)