W949D2DBJX5E TR
Winbond Electronics

Winbond Electronics
IC DRAM 512MBIT PARALLEL 90VFBGA
$2.77
Available to order
Reference Price (USD)
1+
$2.76619
500+
$2.7385281
1000+
$2.7108662
1500+
$2.6832043
2000+
$2.6555424
2500+
$2.6278805
Exquisite packaging
Discount
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The W949D2DBJX5E TR from Winbond Electronics is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the W949D2DBJX5E TR ensures longevity and consistent performance in various environments.
Memory ICs like the W949D2DBJX5E TR are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the W949D2DBJX5E TR delivers unmatched reliability and efficiency.
The W949D2DBJX5E TR is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-VFBGA (8x13)