WAB300M12BM3
Wolfspeed, Inc.
Wolfspeed, Inc.
1200 V, 300 A HALF-BRIDGE MODULE
$901.59
Available to order
Reference Price (USD)
1+
$901.59000
500+
$892.5741
1000+
$883.5582
1500+
$874.5423
2000+
$865.5264
2500+
$856.5105
Exquisite packaging
Discount
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Discover the high-performance WAB300M12BM3 from Wolfspeed, Inc., a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the WAB300M12BM3 delivers unmatched performance. Trust Wolfspeed, Inc.'s cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 382A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 300A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 92mA
- Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 24500pF @ 1000V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Wolfspeed, Inc.