WAS530M12BM3
Wolfspeed, Inc.
Wolfspeed, Inc.
SIC, MODULE, 530A, 1200V, 62MM,
$1,032.15
Available to order
Reference Price (USD)
1+
$1032.15000
500+
$1021.8285
1000+
$1011.507
1500+
$1001.1855
2000+
$990.864
2500+
$980.5425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the WAS530M12BM3 from Wolfspeed, Inc., a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the WAS530M12BM3 provides the reliability and efficiency you need. Wolfspeed, Inc.'s cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
- Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 127mA
- Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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