WNSC08650T6J
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$3.24
Available to order
Reference Price (USD)
1+
$3.24000
500+
$3.2076
1000+
$3.1752
1500+
$3.1428
2000+
$3.1104
2500+
$3.078
Exquisite packaging
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Enhance your circuit performance with the WNSC08650T6J single rectifier diode from WeEn Semiconductors. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the WNSC08650T6J delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. WeEn Semiconductors's WNSC08650T6J is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 267pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 5-DFN (8x8)
- Operating Temperature - Junction: 175°C (Max)
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