WNSC101200Q
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$5.12
Available to order
Reference Price (USD)
1+
$5.11500
500+
$5.06385
1000+
$5.0127
1500+
$4.96155
2000+
$4.9104
2500+
$4.85925
Exquisite packaging
Discount
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The WNSC101200Q by WeEn Semiconductors is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The WNSC101200Q is also used in smart home devices and wearable technology, ensuring seamless operation. WeEn Semiconductors's expertise in semiconductor technology guarantees that the WNSC101200Q delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
- Capacitance @ Vr, F: 510pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
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