WNSC10650T6J
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$3.68
Available to order
Reference Price (USD)
1+
$3.68000
500+
$3.6432
1000+
$3.6064
1500+
$3.5696
2000+
$3.5328
2500+
$3.496
Exquisite packaging
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Enhance your circuit performance with the WNSC10650T6J single rectifier diode from WeEn Semiconductors. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the WNSC10650T6J delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. WeEn Semiconductors's WNSC10650T6J is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 650 V
- Capacitance @ Vr, F: 328pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 5-DFN (8x8)
- Operating Temperature - Junction: 175°C (Max)
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