WNSC12650T6J
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE
$1.95
Available to order
Reference Price (USD)
1+
$1.94700
500+
$1.92753
1000+
$1.90806
1500+
$1.88859
2000+
$1.86912
2500+
$1.84965
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The WNSC12650T6J from WeEn Semiconductors is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. WeEn Semiconductors's dedication to quality means the WNSC12650T6J meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 650 V
- Capacitance @ Vr, F: 328pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 5-DFN (8x8)
- Operating Temperature - Junction: 175°C
Related Products
Microchip Technology
S4230F
Microchip Technology
1N6662US/TR
NXP USA Inc.
PMEG050V150EPD146
Microchip Technology
1N2136RA
Microchip Technology
S40A6
Microchip Technology
JAN1N3890A
Powerex Inc.
R7000205XXUA
Microchip Technology
UPS3200E3/TR13
Microchip Technology
JAN1N6075
Sanken