Shopping cart

Subtotal: $0.00

WNSC6D04650Q

WeEn Semiconductors
WNSC6D04650Q Preview
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE I
$1.89
Available to order
Reference Price (USD)
1+
$1.89000
500+
$1.8711
1000+
$1.8522
1500+
$1.8333
2000+
$1.8144
2500+
$1.7955
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 650 V
  • Capacitance @ Vr, F: 233pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C

Related Products

Nexperia USA Inc.

PMEG150G10ELRX

Diodes Incorporated

SDT5100D1-13

Comchip Technology

US2AB-HF

Taiwan Semiconductor Corporation

SK86CH

Microchip Technology

1N248C

Microchip Technology

UFT3150C

Vishay General Semiconductor - Diodes Division

V8PM6-M3/I

Comchip Technology

ES2AB-HF

Top