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WPB4001-1E

onsemi
WPB4001-1E Preview
onsemi
MOSFET N-CH 500V 26A TO3P-3L
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P-3L
  • Package / Case: TO-3P-3, SC-65-3

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