XPN9R614MC,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 40A 8TSON
$1.47
Available to order
Reference Price (USD)
1+
$1.47000
500+
$1.4553
1000+
$1.4406
1500+
$1.4259
2000+
$1.4112
2500+
$1.3965
Exquisite packaging
Discount
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Enhance your electronic projects with the XPN9R614MC,L1XHQ single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's XPN9R614MC,L1XHQ for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta), 100W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
- Package / Case: 8-PowerVDFN
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