YJQ35N04A-F1-1100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 40V 35A DFN3333-8L
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
Discount
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The YJQ35N04A-F1-1100HF from Yangzhou Yangjie Electronic Technology Co.,Ltd redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the YJQ35N04A-F1-1100HF offers the precision and reliability you need. Trust Yangzhou Yangjie Electronic Technology Co.,Ltd to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 4.1W (Ta), 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3.3x3.3)
- Package / Case: 8-PowerVDFN
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