ZTX550QSTZ
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR EP3 AMMO
$0.29
Available to order
Reference Price (USD)
1+
$0.29003
500+
$0.2871297
1000+
$0.2842294
1500+
$0.2813291
2000+
$0.2784288
2500+
$0.2755285
Exquisite packaging
Discount
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The ZTX550QSTZ Bipolar Junction Transistor (BJT) by Diodes Incorporated is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the ZTX550QSTZ provides consistent performance in demanding applications. Choose Diodes Incorporated for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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