ZTX601QSTZ
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR EP3 AMMO
$0.42
Available to order
Reference Price (USD)
1+
$0.41805
500+
$0.4138695
1000+
$0.409689
1500+
$0.4055085
2000+
$0.401328
2500+
$0.3971475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZTX601QSTZ Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the ZTX601QSTZ is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1 W
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
Related Products
Micro Commercial Co
MMBT3906HE3-TP
onsemi
2SA1766-D-TD-E
onsemi
2SA1729S-TD-E
Microchip Technology
2N4309
Microchip Technology
2N2906AL
Microchip Technology
JANSP2N3439L
Microchip Technology
JANTXV2N5665
Micro Commercial Co
MMBTA92HE3-TP
onsemi
2SA1730S-TD-E
Microchip Technology