ZTX603STOA
Diodes Incorporated
Diodes Incorporated
TRANS NPN DARL 80V 1A E-LINE
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Experience unmatched performance with the ZTX603STOA Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the ZTX603STOA delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
- Power - Max: 1 W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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