ZTX605STOB
Diodes Incorporated
Diodes Incorporated
TRANS NPN DARL 120V 1A E-LINE
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the ZTX605STOB Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the ZTX605STOB delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
- Power - Max: 1 W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
Related Products
onsemi
KSD73YTU
Infineon Technologies
BCP54E6327HTSA1
Micro Commercial Co
2SC2655L-Y-AP
Toshiba Semiconductor and Storage
2SD2257(Q,M)
NXP USA Inc.
PMBT3906/TE1215
NXP USA Inc.
BC638,116
Rohm Semiconductor
2SAR543DTL
onsemi
BCX19_D87Z
Fairchild Semiconductor
BC238CBU
Bourns Inc.