ZTX614QSTZ
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR EP3 AMMO
$0.28
Available to order
Reference Price (USD)
1+
$0.28465
500+
$0.2818035
1000+
$0.278957
1500+
$0.2761105
2000+
$0.273264
2500+
$0.2704175
Exquisite packaging
Discount
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Optimize your electronic systems with the ZTX614QSTZ Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the ZTX614QSTZ delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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