ZTX651STZ
Diodes Incorporated
Diodes Incorporated
TRANS NPN 60V 2A E-LINE
$0.91
Available to order
Reference Price (USD)
2,000+
$0.39618
6,000+
$0.37203
10,000+
$0.36800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZTX651STZ Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the ZTX651STZ is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 1 W
- Frequency - Transition: 175MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
Related Products
onsemi
SPS9607RLRM
Infineon Technologies
BC846BWE6327
Nexperia USA Inc.
PBSS5350X,146
Diodes Incorporated
BC858BW-7-F
onsemi
BCW72LT1
Diodes Incorporated
BCP5610TA
Renesas Electronics America Inc
AA1A4M-T(ND)-A
Central Semiconductor Corp
2N6055 PBFREE
onsemi
2SC3648T-TD-E
NTE Electronics, Inc