ZTX653QSTZ
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR EP3 AMMO
$0.43
Available to order
Reference Price (USD)
1+
$0.42900
500+
$0.42471
1000+
$0.42042
1500+
$0.41613
2000+
$0.41184
2500+
$0.40755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the ZTX653QSTZ Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the ZTX653QSTZ is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 1 W
- Frequency - Transition: 175MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
Related Products
Harris Corporation
2N5490
Renesas Electronics America Inc
UPA1456H(1)-AZ
Renesas Electronics America Inc
2SC4570-T1-A
Microchip Technology
JANSL2N3635UB
Harris Corporation
CA3083S2064
Fairchild Semiconductor
FJPF19430TU
onsemi
NSVS50030SB3T1G
Microchip Technology
JAN2N918UB/TR
Microchip Technology
2N7377
Microchip Technology