ZTX857QSTZ
Diodes Incorporated
Diodes Incorporated
PWR HI VOLTAGE TRANSISTOR EP3 AM
$0.63
Available to order
Reference Price (USD)
1+
$0.62805
500+
$0.6217695
1000+
$0.615489
1500+
$0.6092085
2000+
$0.602928
2500+
$0.5966475
Exquisite packaging
Discount
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The ZTX857QSTZ from Diodes Incorporated is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the ZTX857QSTZ is a reliable choice for both commercial and industrial use. Trust Diodes Incorporated to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
- Power - Max: 1.2 W
- Frequency - Transition: 80MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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