ZVNL120GTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 200V 320MA SOT223
$1.03
Available to order
Reference Price (USD)
1,000+
$0.46550
2,000+
$0.42632
5,000+
$0.40019
10,000+
$0.38713
25,000+
$0.38000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the ZVNL120GTA from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the ZVNL120GTA ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA
Related Products
onsemi
2SJ654
onsemi
NTAT6H406NT4G
onsemi
NTD3813NT4G
Fairchild Semiconductor
FDP6035AL
Vishay Siliconix
SIHF530-GE3
Diodes Incorporated
ZXMN6A25GTA
onsemi
FDC2612
Nexperia USA Inc.
PMZB390UNEYL
Vishay Siliconix
IRFZ24STRLPBF
Panjit International Inc.