ZVP4525E6TA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 250V 197MA SOT23-6
$1.00
Available to order
Reference Price (USD)
3,000+
$0.41285
6,000+
$0.38755
15,000+
$0.37490
30,000+
$0.36800
Exquisite packaging
Discount
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Upgrade your designs with the ZVP4525E6TA by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the ZVP4525E6TA is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 197mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
- Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
- Vgs (Max): ±40V
- Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
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