ZXMC3AM832TA
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
$0.67
Available to order
Reference Price (USD)
1+
$0.63000
10+
$0.53900
100+
$0.40240
500+
$0.31620
Exquisite packaging
Discount
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The ZXMC3AM832TA by Diodes Incorporated is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the ZXMC3AM832TA ensures consistent and dependable performance. Diodes Incorporated's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Power - Max: 1.7W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-MLP (3x2)
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