ZXMHN6A07T8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 4N-CH 60V 1.4A SM8
$0.00
Available to order
Reference Price (USD)
1,000+
$2.52000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the ZXMHN6A07T8TA from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the ZXMHN6A07T8TA stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Obsolete
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.4A
- Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
Related Products
Advanced Linear Devices Inc.
ALD1115MAL
Infineon Technologies
AUIRF7304Q
Vishay Siliconix
SQ4946AEY-T1_GE3
Intersil
HIP2100IBTS2075
Vishay Siliconix
SQJ962EP-T1-GE3
Infineon Technologies
IRF5850TR
Vishay Siliconix
SI5504DC-T1-E3
Infineon Technologies
BSD223P
Fairchild Semiconductor
SSD2025TF
Infineon Technologies