ZXMN10A07FTC
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 700MA SOT23-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMN10A07FTC by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IPB023N06N3GATMA1
IXYS
IXTP5N60P
Infineon Technologies
IRF7704GTRPBF
Infineon Technologies
IPI120N06S402AKSA1
Taiwan Semiconductor Corporation
TSM15N50CZ C0G
onsemi
NTTFS4C56NTWG
Infineon Technologies
IRFU3910
Infineon Technologies
IRFZ34NSPBF
Vishay Siliconix
SUD50N03-06AP-T4E3
Infineon Technologies