ZXMN3F30FHTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 3.8A SOT23-3
$0.49
Available to order
Reference Price (USD)
3,000+
$0.18498
6,000+
$0.17430
15,000+
$0.16361
30,000+
$0.15614
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMN3F30FHTA by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the ZXMN3F30FHTA is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 318 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
STMicroelectronics
STFW38N65M5
Toshiba Semiconductor and Storage
TK9A65W,S5X
Micro Commercial Co
MCU90N02-TP
Diodes Incorporated
DMN61D8L-7
Alpha & Omega Semiconductor Inc.
AOT66920L
Toshiba Semiconductor and Storage
TK35N65W5,S1F
Renesas Electronics America Inc
NP88N055MHE-S18-AY
Infineon Technologies
IRFH7787TRPBF
Infineon Technologies
IRFR3711TRPBF
Vishay Siliconix