ZXMN6A09DN8TC
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 4.3A 8SOIC
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The ZXMN6A09DN8TC by Diodes Incorporated is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the ZXMN6A09DN8TC offers superior functionality and longevity. Trust Diodes Incorporated to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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