ZXMP10A18GTA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 100V 2.6A SOT223
$1.98
Available to order
Reference Price (USD)
1,000+
$0.84535
2,000+
$0.78705
5,000+
$0.75790
10,000+
$0.74200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the ZXMP10A18GTA single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the ZXMP10A18GTA combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA
Related Products
Micro Commercial Co
SI3402-TP
Diodes Incorporated
BSS84Q-13-F
Vishay Siliconix
IRFR310PBF
onsemi
CPH3427-TL-E
Vishay Siliconix
SIHP17N60D-E3
Infineon Technologies
IRFI4227PBF
Vishay Siliconix
IRFR430ATRLPBF
Nexperia USA Inc.
PMZ1200UPEYL
Vishay Siliconix
SQJ486EP-T1_GE3
Rohm Semiconductor