ZXMP3F35N8TA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 30V 9.3A 8SO
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The ZXMP3F35N8TA from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's ZXMP3F35N8TA for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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