ZXMP6A16DN8QTA
Diodes Incorporated
Diodes Incorporated
MOSFET 2P-CH 60V 2.9A 8-SOIC
$1.56
Available to order
Reference Price (USD)
500+
$0.93890
1,000+
$0.75850
2,500+
$0.71340
5,000+
$0.68183
12,500+
$0.65928
Exquisite packaging
Discount
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The ZXMP6A16DN8QTA by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the ZXMP6A16DN8QTA provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
- Power - Max: 1.81W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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