ZXTC2045E6QTA
Diodes Incorporated

Diodes Incorporated
TRANS NPN/PNP 30V 1.5A
$0.30
Available to order
Reference Price (USD)
3,000+
$0.33365
Exquisite packaging
Discount
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Engineered for reliability, the ZXTC2045E6QTA BJT Array from Diodes Incorporated delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The ZXTC2045E6QTA shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 375mV @ 15mA, 750mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
- Power - Max: 700mW
- Frequency - Transition: 265MHz, 195MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26