ZXTDE4M832TA
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 80V/70V 8MLP
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Precision meets power in the ZXTDE4M832TA BJT Array by Diodes Incorporated. Specifically engineered for Class-B audio amplifiers and active filters, this Discrete Semiconductor Product delivers THD<0.1% for studio-grade sound reproduction. Telecommunications infrastructure and test equipment manufacturers rely on its stable beta characteristics across temperature ranges. The ZXTDE4M832TA comes with anti-oxidation terminals, ensuring solderability even after prolonged storage.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 3.5A, 2.5A
- Voltage - Collector Emitter Breakdown (Max): 80V, 70V
- Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A, 260mV @ 200mA, 1.5A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 40 @ 1.5A, 5V
- Power - Max: 1W
- Frequency - Transition: 160MHz, 180MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-MLP (3x2)
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