ZXTP03200BZTA
Diodes Incorporated
Diodes Incorporated
TRANS PNP 200V 2A SOT89-3
$0.87
Available to order
Reference Price (USD)
1,000+
$0.44375
2,000+
$0.41750
5,000+
$0.40000
Exquisite packaging
Discount
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Experience unmatched performance with the ZXTP03200BZTA Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the ZXTP03200BZTA delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 2A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Power - Max: 1.1 W
- Frequency - Transition: 105MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Diodes Incorporated