ZXTP56020FDBQ-7
Diodes Incorporated
Diodes Incorporated
TRANS 2PNP 20V 2A U-DFN2020-6
$0.64
Available to order
Reference Price (USD)
3,000+
$0.25128
6,000+
$0.23684
15,000+
$0.22241
30,000+
$0.22000
Exquisite packaging
Discount
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The ZXTP56020FDBQ-7 BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The ZXTP56020FDBQ-7 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
- Power - Max: 405mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6
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